1. Shodhganga@INFLIBNET
  2. Indian Institute of Technology Guwahati
  3. DEPARTMENT OF PHYSICS
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/485642
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DC FieldValueLanguage
dc.coverage.spatialPhysics
dc.date.accessioned2023-05-25T12:48:23Z-
dc.date.available2023-05-25T12:48:23Z-
dc.identifier.urihttp://hdl.handle.net/10603/485642-
dc.description.abstractAbstract not available newline newline
dc.format.extentNot Available
dc.languageEnglish
dc.relationNot Available
dc.rightsself
dc.titlePreparation and study of high quality hydrogenated silicon films from amorphous to microcry stalline transition range for photovoltaic applications
dc.title.alternativeNot available
dc.creator.researcherGogoi, Purabi
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Applied
dc.description.noteNot Available
dc.contributor.guideAgarwal, Pratima
dc.publisher.placeGuwahati
dc.publisher.universityIndian Institute of Technology Guwahati
dc.publisher.institutionDEPARTMENT OF PHYSICS
dc.date.registered2003
dc.date.completed2010
dc.date.awarded2010
dc.format.dimensionsNot Available
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:DEPARTMENT OF PHYSICS

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01_fulltext.pdfAttached File20.6 MBAdobe PDFView/Open
04_abstract.pdf341.91 kBAdobe PDFView/Open
80_recommendation.pdf332.43 kBAdobe PDFView/Open
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