1. Shodhganga@INFLIBNET
  2. Indian Institute of Technology Bombay
  3. Department of Electrical Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/485211
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DC FieldValueLanguage
dc.coverage.spatialDepartment of Electrical Engineering
dc.date.accessioned2023-05-24T08:12:50Z-
dc.date.available2023-05-24T08:12:50Z-
dc.identifier.urihttp://hdl.handle.net/10603/485211-
dc.description.abstractAbstract attached newline newline
dc.format.extentNA
dc.languageEnglish
dc.relationNA
dc.rightsuniversity
dc.titleGate dielectrics for high performance AlGaN GaN based high electron mobility transistors
dc.title.alternativeNa
dc.creator.researcherRawat, Akanksha
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.description.noteNA
dc.contributor.guideSaha, Dipankar and Ganguly, Swaroop
dc.publisher.placeMumbai
dc.publisher.universityIndian Institute of Technology Bombay
dc.publisher.institutionDepartment of Electrical Engineering
dc.date.registered2013
dc.date.completed2019
dc.date.awarded2019
dc.format.dimensionsNA
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electrical Engineering

Files in This Item:
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01_title.pdfAttached File109.13 kBAdobe PDFView/Open
02_prelimpages.pdf365.48 kBAdobe PDFView/Open
03_abstract.pdf96.35 kBAdobe PDFView/Open
04_contents.pdf170.98 kBAdobe PDFView/Open
05_chapter_1.pdf303.46 kBAdobe PDFView/Open
06_chapter_2.pdf542.14 kBAdobe PDFView/Open
07_chapter_3.pdf1.01 MBAdobe PDFView/Open
08_chapter_4.pdf428.61 kBAdobe PDFView/Open
09_chapter_5.pdf404.22 kBAdobe PDFView/Open
10_annexure.pdf167.27 kBAdobe PDFView/Open
80_recommendation.pdf128.28 kBAdobe PDFView/Open
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