Pulsed laser deposition and characterization of alncoma tio2coma and znonedashxmgxo left bracket 0 less than or equal to x less than or equal to 0 point 7 right bracket semiconductor thin films

Abstract

The focus of work presented in this thesis was to understand and optimize the pulsed laser deposition PLD process to fabricate thin films of three important wide band gap semiconductors AlN TiO2 and Zn1 xMgxO 0DxD0 7 These three materials were chosen due to their potential for opto electronic applications in the UV region AlN thin films were deposited onto Si 100 at room temperature in N2 ambient using PLD technique The use of pure Al metal as target in the present work instead of Al