Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/482539
Title: Analysis of negative capacitance effect in nanoscale transistors for memory and biosensor applications
Researcher: Bharathiraj M
Guide(s): Ewinsponpushpa S
Keywords: Negative capacitance
biosensor
Computer Science Information Systems
University: Anna University
Completed Date: 2022
Abstract: The scaling of the transistor increases the density of the chip to newlinemeet the end-user requirements. The dennard scaling law predicted that the newlineswitching speed of the transistor improves with scaling down the technology newlinenode. Interestingly, the short channel effect in the sub-20nm technology arises newlineand has become an unavoidable metric. It further degrades the performance of newlinethe entire system with huge power consumption. The boltzmann tyranny of newline60mv/dec of subthreshold swing has become a bottleneck to the newlinesemiconductor industry which needs to be reduced. Multigate transistors have newlinebeen proposed to mitigate this problem and to achieve better electrostatics. newlineThe ferroelectric materials provide passive amplification by exhibiting the newlinenegative capacitance effect helps the industry to further scale down up to newline4nm. This technique is used to reduce the short channel effects and has a high newlineon current in the sub-20nm technology nodes. The usage of ferroelectric newlinematerials in the Carbon Nanotube Field Effect Transistor (CNFET) is studied newlinein this work and its short channel effect comprising subthreshold swing of newline25.39% and Drain induced barrier lowering of 32.14% is reduced. newlineAdditionally, CNFET is used to improve the reliability of the memory cells in newlineaerospace applications which is vulnerable to cosmic rays and requires newlineradiation-tolerant memory designs. Finally, the usage of ferroelectrics in newlinebioFET is studied with help of plasmon field-effect transistor doped with gold newlinenanoparticles aligned over the active layer for the biosensing applications. newlineThe incorporation of ferroelectric material in plasmon FET provides better newlinesensitivity and absorption. The coupling of proposed electronic and optical newlineelements in the single silicon chip is highly complicated and has compatibility newlineissues that need to be sorted out. newline
Pagination: xv,117
URI: http://hdl.handle.net/10603/482539
Appears in Departments:Faculty of Information and Communication Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File22.21 kBAdobe PDFView/Open
02_prelimpage.pdf516.12 kBAdobe PDFView/Open
03_content.pdf6.19 kBAdobe PDFView/Open
04_abstracts.pdf3.76 kBAdobe PDFView/Open
05_chapter1.pdf34.5 kBAdobe PDFView/Open
06_chapter2.pdf52.11 kBAdobe PDFView/Open
07_chapter3.pdf1.73 MBAdobe PDFView/Open
08_chapter4.pdf2.48 MBAdobe PDFView/Open
09_chapter5.pdf3.08 MBAdobe PDFView/Open
10_annexure.pdf92.93 kBAdobe PDFView/Open
80_recommendation.pdf67.48 kBAdobe PDFView/Open
Show full item record


Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).

Altmetric Badge: