1. Shodhganga@INFLIBNET
  2. B S Abdur Rahman Crescent Institute of Science & Technology
  3. Department of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/482462
Title: Investigation on Ferroelectric Polarization Based Resistive Switching Random Access Memory ReRAM Devices
Researcher: Shahnaz Kossar
Guide(s): Amiruddin, R
Keywords: Physical Sciences
Physics
Physics Particles and Fields
University: B S Abdur Rahman Crescent Institute of Science and Technology
Completed Date: 2023
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/482462
Appears in Departments:Department of Physics

Files in This Item:
File Description SizeFormat 
10.list of figures.pdfAttached File220.39 kBAdobe PDFView/Open
11.list of symbols and abbreviations.pdf97.38 kBAdobe PDFView/Open
1.front page.pdf112.3 kBAdobe PDFView/Open
4. declaration by the research scholar.pdf263.01 kBAdobe PDFView/Open
6. acknowledgement.pdf185.27 kBAdobe PDFView/Open
7.abstract.pdf185.61 kBAdobe PDFView/Open
80_recommendation.pdf225.63 kBAdobe PDFView/Open
8.table of contents.pdf121.42 kBAdobe PDFView/Open
9.list of tables.pdf196.5 kBAdobe PDFView/Open
chapter 1.pdf1.47 MBAdobe PDFView/Open
chapter 2.pdf278.24 kBAdobe PDFView/Open
chapter 3.pdf470.5 kBAdobe PDFView/Open
chapter 4.pdf2.89 MBAdobe PDFView/Open
chapter 5.pdf2.86 MBAdobe PDFView/Open
chapter 6.pdf1.55 MBAdobe PDFView/Open
chapter 7.pdf1.22 MBAdobe PDFView/Open
chapter 8.pdf200.88 kBAdobe PDFView/Open
references.pdf365.15 kBAdobe PDFView/Open
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