Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/482462
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dc.coverage.spatial
dc.date.accessioned2023-05-11T10:01:36Z-
dc.date.available2023-05-11T10:01:36Z-
dc.identifier.urihttp://hdl.handle.net/10603/482462-
dc.description.abstractnewline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleInvestigation on Ferroelectric Polarization Based Resistive Switching Random Access Memory ReRAM Devices
dc.title.alternative
dc.creator.researcherShahnaz Kossar
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Particles and Fields
dc.description.note
dc.contributor.guideAmiruddin, R
dc.publisher.placeChennai
dc.publisher.universityB S Abdur Rahman Crescent Institute of Science and Technology
dc.publisher.institutionDepartment of Physics
dc.date.registered2017
dc.date.completed2023
dc.date.awarded2023
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

Files in This Item:
File Description SizeFormat 
10.list of figures.pdfAttached File220.39 kBAdobe PDFView/Open
11.list of symbols and abbreviations.pdf97.38 kBAdobe PDFView/Open
1.front page.pdf112.3 kBAdobe PDFView/Open
4. declaration by the research scholar.pdf263.01 kBAdobe PDFView/Open
6. acknowledgement.pdf185.27 kBAdobe PDFView/Open
7.abstract.pdf185.61 kBAdobe PDFView/Open
80_recommendation.pdf225.63 kBAdobe PDFView/Open
8.table of contents.pdf121.42 kBAdobe PDFView/Open
9.list of tables.pdf196.5 kBAdobe PDFView/Open
chapter 1.pdf1.47 MBAdobe PDFView/Open
chapter 2.pdf278.24 kBAdobe PDFView/Open
chapter 3.pdf470.5 kBAdobe PDFView/Open
chapter 4.pdf2.89 MBAdobe PDFView/Open
chapter 5.pdf2.86 MBAdobe PDFView/Open
chapter 6.pdf1.55 MBAdobe PDFView/Open
chapter 7.pdf1.22 MBAdobe PDFView/Open
chapter 8.pdf200.88 kBAdobe PDFView/Open
references.pdf365.15 kBAdobe PDFView/Open


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