1. Shodhganga@INFLIBNET
  2. Indian Institute of Space Science and Technology
  3. Department of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/474747
Title: Design Development and Fabrication of Gallium Nitride GaN High Electron Mobility Transistor HEMT based terahertz devices for Space Applications
Researcher: Rakeshkumar Kaneriya
Guide(s): Palashkumar Basu and Solomon Ivan
Keywords: Physical Sciences
Space Sciences
Astronomy and Astrophysics space science
photonics, photoluminescence, electromagnetic spectrum, polarization, semiconductor, intersubband energy
University: Indian Institute of Space Science and Technology
Completed Date: 2023
Abstract: newline
Pagination: xxxii, 178p
URI: http://hdl.handle.net/10603/474747
Appears in Departments:Department of Physics

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01_title.pdfAttached File35.49 kBAdobe PDFView/Open
02_prelim pages.pdf160.49 kBAdobe PDFView/Open
03_table of contents.pdf25.2 kBAdobe PDFView/Open
04_abstract.pdf39.21 kBAdobe PDFView/Open
05_abbreviations.pdf29.18 kBAdobe PDFView/Open
06_chapter 1.pdf259.29 kBAdobe PDFView/Open
07_chapter 2.pdf678.1 kBAdobe PDFView/Open
08_chapter 3.pdf1.39 MBAdobe PDFView/Open
09_chapter 4.pdf1.75 MBAdobe PDFView/Open
10_chapter 5.pdf2.87 MBAdobe PDFView/Open
11_chapter 6.pdf931.29 kBAdobe PDFView/Open
12_chapter 7.pdf1.65 MBAdobe PDFView/Open
13_chapter 8.pdf56.78 kBAdobe PDFView/Open
14_annexures.pdf155.21 kBAdobe PDFView/Open
80_recommendation.pdf84.53 kBAdobe PDFView/Open
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