Studies on third order optical nonlinearity photoluminescence and random lasing in pulsed laser deposited Zn1 xAlxO 0and#8804;xand#8804;0 10 and Zn1 xTixO 0and#8804;xand#8804;0 05 thin films

Abstract

The present thesis was aimed to look into the optimum impurity content of Al and Ti in the host ZnO thin film for improved photoluminescence, nonlinear optical response and random lasing.Both types of films, Zn1-xAlxO (0â ¤xâ ¤0.10) and Zn1-xTixO (0â ¤xâ ¤0.05), were deposited onto fused silica as well as silicon substrates via pulsed laser deposition technique. The best crystalline quality and preferred c-axis orientation was exhibited by the film grown at x=0.05 and x=0.02 compositions for Zn1 newline