1. Shodhganga@INFLIBNET
  2. Indian Institute of Science Bangalore
  3. Electronic Systems Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/470150
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DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2023-03-16T08:37:28Z-
dc.date.available2023-03-16T08:37:28Z-
dc.identifier.urihttp://hdl.handle.net/10603/470150-
dc.description.abstractAbstract is available newline
dc.format.extentxii, 102p.
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleQuantum Drift Diffusion Formalism Based Compact Model For Low Effective Mass Channel MOSFET
dc.title.alternative
dc.creator.researcherChakraborty, Ananda Sankar
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.description.note
dc.contributor.guideMahapatra, Santanu
dc.publisher.placeBangalore
dc.publisher.universityIndian Institute of Science Bangalore
dc.publisher.institutionElectronic Systems Engineering
dc.date.registered
dc.date.completed2018
dc.date.awarded2019
dc.format.dimensions30cm.
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Electronic Systems Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File202.45 kBAdobe PDFView/Open
02_prelim pages.pdf359.72 kBAdobe PDFView/Open
03_table of contents.pdf120.51 kBAdobe PDFView/Open
04_abstract.pdf50.67 kBAdobe PDFView/Open
05_chapter 1.pdf308.78 kBAdobe PDFView/Open
06_chapter 2.pdf490 kBAdobe PDFView/Open
07_chapter 3.pdf418.21 kBAdobe PDFView/Open
08_chapter 4.pdf428.66 kBAdobe PDFView/Open
09_annexure.pdf207.12 kBAdobe PDFView/Open
80_recommendation.pdf322.7 kBAdobe PDFView/Open
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