Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/468740
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dc.coverage.spatialLaser speckle studies of silicon Wafer for solar cell devices
dc.date.accessioned2023-03-14T08:24:42Z-
dc.date.available2023-03-14T08:24:42Z-
dc.identifier.urihttp://hdl.handle.net/10603/468740-
dc.description.abstractSilicon occupies a dominant space in photovoltaic industry for the manufacturing of solar cells. Performance of the photovoltaic panels depend upon the quality of the silicon wafer substrate. Identifying the good optically rough, defect free and mechanically stable wafers are paramount important for an efficiency improvement. The property and functionality of the wafer mainly depend upon the surface roughness. Roughness can be assessed while the light interacts with the surface. An intimate connection between surface roughness and reflectance is a well-known one for researchers. In order to reduce the reflectance, it is an essential to identify the silicon wafer with good optical roughness. Hence, in this present investigation non-contact, less expensive and real time Laser speckle Imaging set up is used as a characterisation tool to get data about the surface roughness by means of Fractal Dimension of silicon wafer. The Fractal Dimension (FD) describe the surface roughness of optically rough silicon wafer from the laser speckle images. newlineA commercially available silicon wafer Grade-A with thickness of 180and#956;m, breadth 2 cm and length 7 cm has been selected as a specimen. The specimen without any crack and contamination is picked for an investigation. The laser speckle imaging set up consists of laser source, silicon wafer and CCD camera with personal computer for image processing. An optically rough silicon wafer is irradiated by a highly coherent semiconductor diode laser of wavelength 532nm with 5mw power. The speckle images are constructed due to self-interference effect caused by the scattered light from the specimen. The speckle formation is caught by a good resolution CCD camera. The sample is rotated at different angles like 2º, 4º and 6º. Images are recorded and further processed for surface roughness evaluation by using Image J software newline
dc.format.extentxix,123p.
dc.languageEnglish
dc.relationp.109-122
dc.rightsuniversity
dc.titleLaser speckle studies of silicon Wafer for solar cell devices
dc.title.alternative
dc.creator.researcherPrakasam, R
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Applied
dc.subject.keywordLaser speckle
dc.subject.keywordFractal dimension
dc.subject.keywordSurface roughness
dc.description.note
dc.contributor.guideBalamurugan, R
dc.publisher.placeChennai
dc.publisher.universityAnna University
dc.publisher.institutionFaculty of Science and Humanities
dc.date.registered
dc.date.completed2020
dc.date.awarded2020
dc.format.dimensions21cm
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Faculty of Science and Humanities

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01_title.pdfAttached File32.96 kBAdobe PDFView/Open
02_prelim pages.pdf8.26 MBAdobe PDFView/Open
03_content.pdf62.03 kBAdobe PDFView/Open
04_abstract.pdf24.82 kBAdobe PDFView/Open
05_chapter 1.pdf229.83 kBAdobe PDFView/Open
06_chapter 2.pdf818.2 kBAdobe PDFView/Open
07_chapter 3.pdf909.65 kBAdobe PDFView/Open
08_chapter 4.pdf756.38 kBAdobe PDFView/Open
09_chapter 5.pdf549.95 kBAdobe PDFView/Open
10_chapter 6.pdf21.81 kBAdobe PDFView/Open
11_chapter 7.pdf1.13 MBAdobe PDFView/Open
12_annexures.pdf130.39 kBAdobe PDFView/Open
80_recommendation.pdf60.66 kBAdobe PDFView/Open


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