Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/468188
Title: Normally off AlxGa 1 x N GaN devices Materials process and device architecture innovations
Researcher: Soman, Rohith
Guide(s): Bhat, Navakanta and Raghavan, Srinivasan
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Science Bangalore
Completed Date: 2018
Abstract: Abstract is available newline
Pagination: xx, 102p.
URI: http://hdl.handle.net/10603/468188
Appears in Departments:Centre for Nano Science and Engineering

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01_title.pdfAttached File338.38 kBAdobe PDFView/Open
02_prelim pages.pdf479.64 kBAdobe PDFView/Open
03_table of contents.pdf225.04 kBAdobe PDFView/Open
04_abstract.pdf106.35 kBAdobe PDFView/Open
05_chapter 1.pdf697.74 kBAdobe PDFView/Open
06_chapter 2.pdf1.1 MBAdobe PDFView/Open
07_chapter 3.pdf1.42 MBAdobe PDFView/Open
08_chapter 4.pdf1.37 MBAdobe PDFView/Open
09_chapter 5.pdf721.78 kBAdobe PDFView/Open
10_chapter 6.pdf641.8 kBAdobe PDFView/Open
11_chapter 7.pdf736.41 kBAdobe PDFView/Open
12_annexure.pdf551.06 kBAdobe PDFView/Open
80_recommendation.pdf565.04 kBAdobe PDFView/Open
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