Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/467063
Title: Growth and characterization of Sb2Se3 and SnSe2 crystals for photovoltaic applications
Researcher: John, Bibin
Guide(s): Kunjomana, A G
Keywords: Horizontal Normal Freezing (HNF),
Morphology,
Physical Properties and Photovoltaic Applications.
Physical Sciences
Physical Vapor Deposition (PVD),
Physics
Physics Condensed Matter
Supercooling,
Supersaturation,
University: CHRIST University
Completed Date: 2023
Abstract: Tremendous development in crystal growth technology led to the production of good newlinequality samples for the design and fabrication of optoelectronic devices. As naturally available solids exhibit undesirable characteristics, the present research work deals with the artificial synthesis and characterization of defect free binary layered chalcogenide materials newline(LCMs) for photovoltaic (PV) applications. Antimony selenide (Sb2Se3) and tin diselenide newline(SnSe2) have gained special attention in the PV industry due to their eco-friendly, sustainable, and non-hazardous nature as well as the salient features such as moderate melting temperature, p-type conductivity with direct transition, optimum band gap and high newlineabsorption coefficient. Therefore, cost-effective synthesis was implemented to engineer bulk Sb2Se3 and SnSe2 crystals for the enhancement of optoelectronic parameters. Single crystal growth from melt allows the fabrication of large size samples under controlled environment. It gives rise to complexities in maintaining stable temperature for crystallization and newlineachieving chemical homogeneity, if multiple elements are present in the system. The newlinechallenges associated with Bridgman-Stockbarger and Czochralski methods for preparing bulk crystals include irregular heat flow, mechanical movement of furnace or crucible, thermal stress, etc. Moreover, reactivity of the melted material with the ampoule leads to structural irregularities. Hence, horizontal normal freezing (HNF), the facile and inexpensive melt growth technique was employed to explore the suitability of cleaved samples. Most of the vapor phase synthesis methods, especially, the chemical vapor deposition (CVD) deteriorates material quality, which adversely affects the physical properties due to the presence of contamination or foreign elements. But, the physical vapor deposition (PVD) process is favorable as it offers feasible instrumentation and yields stoichiometric specimens with supreme quality and fine-tuned characteristics.
Pagination: xiv, 150p.;
URI: http://hdl.handle.net/10603/467063
Appears in Departments:Department of Physics and Electronics

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File183.87 kBAdobe PDFView/Open
02_prelim pages.pdf992.36 kBAdobe PDFView/Open
03_abstract.pdf42.01 kBAdobe PDFView/Open
04_contents.pdf41.04 kBAdobe PDFView/Open
05_chapter1.pdf467.11 kBAdobe PDFView/Open
06_chapter2.pdf668.6 kBAdobe PDFView/Open
07_chapter3.pdf1.87 MBAdobe PDFView/Open
08_chapter4.pdf708.37 kBAdobe PDFView/Open
09_chapter5.pdf745.45 kBAdobe PDFView/Open
10_chapter6.pdf171.72 kBAdobe PDFView/Open
11_annexures.pdf168.49 kBAdobe PDFView/Open
80_recommendation.pdf351.86 kBAdobe PDFView/Open
Show full item record


Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).

Altmetric Badge: