Characterisation of Cylindrical Gate all around MOSFET

Abstract

The mobile communication and telecom sectors are the fastest growing fields. The customer demands high speed, small size and low power consumption devices. But conventional MOSFET has reached its scaling limit due to existence of various short channel effects (SCEs). A new method must be found out to satisfy the high demands in the electronics world. In view of difficulties of the planar MOSFET technology to get the acceptable gate control over the channel, multiple gate based devices is better technology option for further shrinking the size of the planar MOSFET. This development in MOSFET technology has proven to be the excellent option for the futuristic devices. But this advancement in technology brings new challenges for the device engineers. The design of such advanced MOSFET can further enhance the performance by reducing the SCEs. This acts as a motivation behind the present research work. newline newline