Shodhganga : a reservoir of Indian theses @ INFLIBNET
The Shodhganga@INFLIBNET Centre provides a platform for research students to deposit their Ph.D. theses and make it available to the entire scholarly community in open access.
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/463173
| Title: | GaN based mis hemts with gate dielectrics grown by high pressure oxidation |
| Researcher: | Kanaga, Srikanth |
| Guide(s): | Dasgupta, Amitava |
| Keywords: | Engineering Engineering and Technology Engineering Electrical and Electronic |
| University: | Indian Institute of Technology Madras |
| Completed Date: | 2022 |
| Abstract: | newline |
| Pagination: | xxiii, 148p. |
| URI: | http://hdl.handle.net/10603/463173 |
| Appears in Departments: | Electrical Engineering |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 01_title.pdf | Attached File | 259.92 kB | Adobe PDF | View/Open |
| 02_prelim pages.pdf | 795.25 kB | Adobe PDF | View/Open | |
| 03_content.pdf | 449.89 kB | Adobe PDF | View/Open | |
| 04_abstract.pdf | 26.77 kB | Adobe PDF | View/Open | |
| 05_chapter 1.pdf | 529.82 kB | Adobe PDF | View/Open | |
| 06_chapter 2.pdf | 619.71 kB | Adobe PDF | View/Open | |
| 07_chapter 3.pdf | 2.12 MB | Adobe PDF | View/Open | |
| 08_chapter 4.pdf | 2.41 MB | Adobe PDF | View/Open | |
| 09_chapter 5.pdf | 1.44 MB | Adobe PDF | View/Open | |
| 10_annexure.pdf | 371.28 kB | Adobe PDF | View/Open | |
| 11_chapter 6.pdf | 310.89 kB | Adobe PDF | View/Open | |
| 80_recommendation.pdf | 310.89 kB | Adobe PDF | View/Open |
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