1. Shodhganga@INFLIBNET
  2. Sri Venkateswara University
  3. Department of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/462373
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DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2023-02-18T09:21:30Z-
dc.date.available2023-02-18T09:21:30Z-
dc.identifier.urihttp://hdl.handle.net/10603/462373-
dc.description.abstractnewline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleStudies on Electrical Properties of n InP Based Metal Interlayer Semiconductor MIS Schottky Structures
dc.title.alternative
dc.creator.researcherBalaram, Nare
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Multidisciplinary
dc.description.note
dc.contributor.guideRajagopal, V
dc.publisher.placeTirupati
dc.publisher.universitySri Venkateswara University
dc.publisher.institutionDepartment of Physics
dc.date.registered2015
dc.date.completed2021
dc.date.awarded2021
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

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80_recommendation.pdfAttached File377.99 kBAdobe PDFView/Open
abstract.pdf296.67 kBAdobe PDFView/Open
bibliography.pdf5.87 MBAdobe PDFView/Open
chapter-iii.pdf1.42 MBAdobe PDFView/Open
chapter-ii.pdf1.21 MBAdobe PDFView/Open
chapter-i.pdf1.14 MBAdobe PDFView/Open
chapter-iv.pdf1.86 MBAdobe PDFView/Open
chapter-v.pdf2.43 MBAdobe PDFView/Open
contents.pdf396.78 kBAdobe PDFView/Open
prelims.pdf2.08 MBAdobe PDFView/Open
title.pdf186.9 kBAdobe PDFView/Open
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