1. Shodhganga@INFLIBNET
  2. University of Calcutta
  3. Department of Radio Physics and Electronics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/461195
Title: Significant improvement of InGaN GaN QW leds through modification of structure doping interlayer and annealing
Researcher: Mistry, Apu
Guide(s): Biswas, Dipankar
Keywords: Physical Sciences
Physics
Physics Multidisciplinary
University: University of Calcutta
Completed Date: 2022
Abstract: Abstract available
Pagination: 170p
URI: http://hdl.handle.net/10603/461195
Appears in Departments:Department of Radio Physics and Electronics

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01_title page.pdfAttached File86.76 kBAdobe PDFView/Open
02_prelim pages.pdf406.86 kBAdobe PDFView/Open
03_contents.pdf175.5 kBAdobe PDFView/Open
04_abstract.pdf190.17 kBAdobe PDFView/Open
05_chapter 1.pdf1.53 MBAdobe PDFView/Open
06_chapter 2.pdf464.82 kBAdobe PDFView/Open
07_chapter 3.pdf1.12 MBAdobe PDFView/Open
08_chapter 4.pdf847.07 kBAdobe PDFView/Open
09_chapter 5.pdf1.02 MBAdobe PDFView/Open
10_chapter 6.pdf883.93 kBAdobe PDFView/Open
11_chapter 7.pdf1.03 MBAdobe PDFView/Open
12_chapter 8.pdf923.75 kBAdobe PDFView/Open
13_chapter 9.pdf896.1 kBAdobe PDFView/Open
14_chapter 10.pdf8.99 MBAdobe PDFView/Open
80_recommendation.pdf86.76 kBAdobe PDFView/Open
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