Significant improvement of InGaN  GaN QW leds through modification of structure doping interlayer and annealing

Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/461195

Full metadata record

DC Field	Value	Language
dc.coverage.spatial
dc.date.accessioned	2023-02-18T06:28:47Z	-
dc.date.available	2023-02-18T06:28:47Z	-
dc.identifier.uri	http://hdl.handle.net/10603/461195	-
dc.description.abstract	Abstract available
dc.format.extent	170p
dc.language	English
dc.relation	166-167
dc.rights	university
dc.title	Significant improvement of InGaN GaN QW leds through modification of structure doping interlayer and annealing
dc.title.alternative
dc.creator.researcher	Mistry, Apu
dc.subject.keyword	Physical Sciences
dc.subject.keyword	Physics
dc.subject.keyword	Physics Multidisciplinary
dc.description.note
dc.contributor.guide	Biswas, Dipankar
dc.publisher.place	Kolkata
dc.publisher.university	University of Calcutta
dc.publisher.institution	Department of Radio Physics and Electronics
dc.date.registered
dc.date.completed	2022
dc.date.awarded	2022
dc.format.dimensions
dc.format.accompanyingmaterial	DVD
dc.source.university	University
dc.type.degree	Ph.D.
Appears in Departments:	Department of Radio Physics and Electronics

Files in This Item:

File	Description	Size	Format
01_title page.pdf	Attached File	86.76 kB	Adobe PDF	View/Open
02_prelim pages.pdf		406.86 kB	Adobe PDF	View/Open
03_contents.pdf		175.5 kB	Adobe PDF	View/Open
04_abstract.pdf		190.17 kB	Adobe PDF	View/Open
05_chapter 1.pdf		1.53 MB	Adobe PDF	View/Open
06_chapter 2.pdf		464.82 kB	Adobe PDF	View/Open
07_chapter 3.pdf		1.12 MB	Adobe PDF	View/Open
08_chapter 4.pdf		847.07 kB	Adobe PDF	View/Open
09_chapter 5.pdf		1.02 MB	Adobe PDF	View/Open
10_chapter 6.pdf		883.93 kB	Adobe PDF	View/Open
11_chapter 7.pdf		1.03 MB	Adobe PDF	View/Open
12_chapter 8.pdf		923.75 kB	Adobe PDF	View/Open
13_chapter 9.pdf		896.1 kB	Adobe PDF	View/Open
14_chapter 10.pdf		8.99 MB	Adobe PDF	View/Open
80_recommendation.pdf		86.76 kB	Adobe PDF	View/Open