Design and modeling of charge plasma based dielectric modulated Jlteft for biosensor application

Abstract

In the Complementary Metal-Oxide - Semiconductor (CMOS) technology, over the past four newlinedecades, scaling has been a gateway to continuous development in the silicone-based newlinesemiconductor industry. However, as the nanometre-sized technology development newlineframework for the goal of building ultra-high-density integrated electronic computers and newlineexpanding performance, CMOS devices face fundamental problems such as increased newlineleakage currents, large variations in process parameters, short channel effects, higher newlineproduction costs, etc. The new technology will need to be energy-efficient, dense and allow newlinemore features of the tool, per unit area and time. The present thesis discusses and summarizes newlineadvances in semiconductor devices production of low Power vertical design Tunnel Field- newlineEffect Transistors (TFETs). Owing to its steeper subthreshold slope (SS), TFETs are useful newlinedevice for ultra-low power applications having very low OFF current. Their operations are newlinebased on the controlled switching of quantum-mechanical Band-to-Band Tunneling (BTBT), newlineinstead of the thermionic emissions. newlineAs CMOS technology is facing many severe problems as a sensor application like- power newlinescaling, short channel effects, sensitivity limitation and many fabrication issues etc. So newlinejunction less transistor replaces CMOS technology because of its immunity to short channel newlineeffects and outstanding characteristics. But sensitivity is limited for junction less transistor newlinedevices either for charged biomolecule or for the neutral biomolecule. So there is a need to newlineenhance the sensitivity of the device for the detection of biomolecules that is why in this newlinethesis work the main focus is to enhance the sensitivity of the proposed device for the newlinedetection of the biomolecules. newlineThis thesis deal with design and modeling of charge plasma based dielectric modulated newlinejunctionless gate underlap tunnel field effect transistor (CPB DM TFET) for biosensor newlineapplication. This device is a gated p-i-n diode based on silicon material with double gated newlinecontrol band-2-b