Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/458310
Title: Design And Analysis Of Trench Superjunction Insulated Gate Bipolar Transistor Limitations And Solutions
Researcher: Vaidya, Mahesh
Guide(s): Verma, Shrish and Naugarhiya, Alok
Keywords: Breakdown voltage
Energy Loss
Engineering
Engineering and Technology
Engineering Electrical and Electronic
IGBT
On state voltage drop
Superjunction
University: National Institute of Technology Raipur
Completed Date: 2021
Abstract: Attached
Pagination: XX, 93
URI: http://hdl.handle.net/10603/458310
Appears in Departments:Electronics and Communication Engineering

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01_title.pdfAttached File138.64 kBAdobe PDFView/Open
02_preliminary pages.pdf1.26 MBAdobe PDFView/Open
03_contents.pdf179.26 kBAdobe PDFView/Open
04_abstract.pdf306.77 kBAdobe PDFView/Open
05_chapter 1.pdf1.98 MBAdobe PDFView/Open
06_chapter 2.pdf2.64 MBAdobe PDFView/Open
07_chapter 3.pdf3.35 MBAdobe PDFView/Open
08_chapter 4.pdf4.85 MBAdobe PDFView/Open
09_chapter 5.pdf3.03 MBAdobe PDFView/Open
10_chapter 6.pdf1.97 MBAdobe PDFView/Open
11_annextures.pdf3 MBAdobe PDFView/Open
80_recommendation.pdf441.73 kBAdobe PDFView/Open
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