Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/456213
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dc.coverage.spatial
dc.date.accessioned2023-02-06T06:20:11Z-
dc.date.available2023-02-06T06:20:11Z-
dc.identifier.urihttp://hdl.handle.net/10603/456213-
dc.description.abstractAttached newline
dc.format.extentxx,131
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleEffect of interface strain and phonon confinement on thermoelectric efficiency of gan inxga1 xn gan sl
dc.title.alternative
dc.creator.researcherSahu,Subhranshu Sekhar
dc.subject.keywordFigure of merit
dc.subject.keywordInterfacial Polarization electric field
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Applied
dc.subject.keywordSeebeckcoefficient
dc.subject.keywordThermal conductivity
dc.description.note
dc.contributor.guideSahoo,Bijaya Kumar
dc.publisher.placeRaipur
dc.publisher.universityNational Institute of Technology Raipur
dc.publisher.institutionDepartment of Physics
dc.date.registered2017
dc.date.completed2021
dc.date.awarded2022
dc.format.dimensions30 cm x 21 cm
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

Files in This Item:
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010_chapter 6.pdfAttached File102.32 kBAdobe PDFView/Open
011_annextures.pdf201.33 kBAdobe PDFView/Open
01_title.pdf13.96 kBAdobe PDFView/Open
02_preliminary page.pdf515.84 kBAdobe PDFView/Open
03_content.pdf103.7 kBAdobe PDFView/Open
04_abstract.pdf75.12 kBAdobe PDFView/Open
05_chapter 1.pdf492.53 kBAdobe PDFView/Open
06_chapter 2.pdf343.39 kBAdobe PDFView/Open
07_chapter 3.pdf297.43 kBAdobe PDFView/Open
08_chapter 4.pdf571.75 kBAdobe PDFView/Open
09_chapter 5.pdf438.48 kBAdobe PDFView/Open
80_recommendation.pdf102.67 kBAdobe PDFView/Open


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