1. Shodhganga@INFLIBNET
  2. Indian Institute of Technology Roorkee
  3. Department of Electronics and Communication Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/455246
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DC FieldValueLanguage
dc.coverage.spatialElectronics and Communication Engineering
dc.date.accessioned2023-01-31T04:55:48Z-
dc.date.available2023-01-31T04:55:48Z-
dc.identifier.urihttp://hdl.handle.net/10603/455246-
dc.description.abstractAvailable newline newline
dc.format.extentxxii, 120 p.
dc.languageEnglish
dc.relationNA
dc.rightsuniversity
dc.titleTechniques for improving leakages and row hammer failure in nano scale dram transistor
dc.title.alternativeNa
dc.creator.researcherGautam, Satendra Kumar
dc.subject.keywordComputer Science
dc.subject.keywordEngineering and Technology
dc.subject.keywordTelecommunications
dc.description.note
dc.contributor.guideManhas, Sanjeev Kumar
dc.publisher.placeRoorkee
dc.publisher.universityIndian Institute of Technology Roorkee
dc.publisher.institutionDepartment of Electronics and Communication Engineering
dc.date.registered2015
dc.date.completed2021
dc.date.awarded2021
dc.format.dimensionsNA
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electronics and Communication Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File70.56 kBAdobe PDFView/Open
02_prelim pages.pdf2.36 MBAdobe PDFView/Open
03_abstract.pdf467.88 kBAdobe PDFView/Open
04_chapters 1-7.pdf3.99 MBAdobe PDFView/Open
05_annexures.pdf1.91 MBAdobe PDFView/Open
80_recommendation.pdf839.75 kBAdobe PDFView/Open
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