Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/455246
Title: | Techniques for improving leakages and row hammer failure in nano scale dram transistor |
Researcher: | Gautam, Satendra Kumar |
Guide(s): | Manhas, Sanjeev Kumar |
Keywords: | Computer Science Engineering and Technology Telecommunications |
University: | Indian Institute of Technology Roorkee |
Completed Date: | 2021 |
Abstract: | Available newline newline |
Pagination: | xxii, 120 p. |
URI: | http://hdl.handle.net/10603/455246 |
Appears in Departments: | Department of Electronics and Communication Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 70.56 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 2.36 MB | Adobe PDF | View/Open | |
03_abstract.pdf | 467.88 kB | Adobe PDF | View/Open | |
04_chapters 1-7.pdf | 3.99 MB | Adobe PDF | View/Open | |
05_annexures.pdf | 1.91 MB | Adobe PDF | View/Open | |
80_recommendation.pdf | 839.75 kB | Adobe PDF | View/Open |
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