Comparative Investigation of Magnetic and Optical Properties of Transition Metal Doped SnO2 at Different Annealing Temperature

Abstract

Nanoscale materials have been extensively studied over many years due to their newlinefascinating properties which relate their interface well controlled at nanoscale and newlinedistinctively harness their properties at multifunctional level. But recently, a big leap newlinehas been made in evolution of technological success by the development of electronic newlinedevices at miniature level. This has attained enormous interest because of enhanced newlineperformance and speed limit of information traffic in such devices. Thus, it has been newlinepossible to curtail down the size of such devices as low as nanometric scale or even newlinelesser by advances made in new technique of nanolithographic fabrication and selfassembly newlineby chemical methods (Bratton 2006, Offenhäusser 2009, Li 2010). This newlinetechnological advancement has affected the conventional semiconductor devices newlineenormously, thereby, opening up window in the new era of quantum effects. newlineAccording to quantum mechanical laws, energy of any crystal is quantized, as free newlinecarriers present in semiconductor or metals can be designated only distinct energy newlinevalues. For practical applications, the closely spaced energy levels appear to exhibit a newlinecontinuum except for characteristic gaps well defined in semiconductors. At newlinenanometric scale the quantum energy levels starts spreading out. Thus, the ability to newlineengineer the nanostructures correctly makes it possible for the settlement of electrons newlinein the nanostructure itself. newline