Modelling Simulation Analysis of Gate Engineered heterojunction surrounding gate TFETs

Abstract

Complementary Metal Oxide Semiconductor (CMOS) prevalent technology is seen constantly advancing in modern electronics. CMOS technology has conquered in the various fields of applications such as communication, automotive, medical and entertainment. The advantages of CMOS technology are scaling, low power consumption and high noise immunity. With CMOS downscaling, the transistors structural design and technology to understand them have endured various modifications above years, while the transistor device basic operation remained same.CMOS technology is an organization of P-type and N-type MOSFETS. The MOSFETS are newlineuseful for electronic design due to its interesting features like: high speed switching operation, low power consumption, low operating voltage etc. Scaling down the MOSFETs restricts the physics of the current transport and increases the leakage current. On reduction of supply voltage in circuits of MOSFET devices, subthreshold swing is restricted to 60mV/dec. The gate losses its control on the channel potential due to decrease in channel length of MOSFET device. Additionally the threshold voltage decreases due to short channel effects, increase in newlineDrain Induced Barrier Lowering, Substrate bias and Threshold Voltage Roll Off. newlineIn this respect, Tunnel Field Effect Transistor is a favorable alternate device which operates based on the electron unneling principle. As electrons tunnel from valence band to conduction band crossing over the band gap, such operation is called as electron tunneling occurring without backing traps in TFET ON state condition. In TFET OFF state condition, across channel the valance band get position just below the conduction band of source region, due to which electron tunneling reduces which intern leads low OFF state currents. TFET is an ambipolar device with extremely low ON state current. TFET devices require low power and subthreshold swing limit is low compared to MOSFETs. Further to improve ON state current newlineheterojunction TFETs are reported. newline