1. Shodhganga@INFLIBNET
  2. Indian Institute of Technology Bombay
  3. Department of Electrical Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/452250
Title: Gate stack and contact engineering on beta ga2o3 and ge for next generation transistors
Researcher: Biswas, Dipankar
Guide(s): Lodha, Saurabh
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Bombay
Completed Date: 2022
Abstract: Abstract attached newline newline
Pagination: NA
URI: http://hdl.handle.net/10603/452250
Appears in Departments:Department of Electrical Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File168.63 kBAdobe PDFView/Open
02_prelimpages.pdf496.41 kBAdobe PDFView/Open
03_abstract.pdf92.38 kBAdobe PDFView/Open
04_contents.pdf168.71 kBAdobe PDFView/Open
05_chapter_1.pdf617.11 kBAdobe PDFView/Open
06_chapter_2.pdf4.75 MBAdobe PDFView/Open
07_chapter_3.pdf5.42 MBAdobe PDFView/Open
08_chapter_4.pdf646.7 kBAdobe PDFView/Open
09_chapter_5.pdf382.43 kBAdobe PDFView/Open
10_chapter_6.pdf2.57 MBAdobe PDFView/Open
11_appendix.pdf1.78 MBAdobe PDFView/Open
80_recommendation.pdf76.95 kBAdobe PDFView/Open
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