Modeling simulation and characterization of field plated algangan double heterostructure hemt for high power and microwave frequency applications

Abstract

newlineIn the past, most of the research and development efforts in solid-state devices and ICand#8223;s are oriented towards high power and high frequency of the systems. Focusing on the need for high power and high frequency for solid-state devices, the High Electron Mobility Transistors (HEMT) and the III-V compound materials have been extensively analyzed. In recent days, GaN-based HEMT has become an emerging device because of its high power and high-frequency applications. Most of the work has been done in single channel (SC) high electron mobility transistors (HEMT). In this thesis, an in-depth analysis of an electric field and breakdown voltage (BV) comparison of single-channel and double-channel (DC) GaN HEMTs have been carried out. Generally, the techniques used for enhancing breakdown voltage are: schottky source/drain contact technique, high k passivation layer technique, and gate field-plate engineering technique. Amongst them, gate field plate is considered in the analytical model development of AlGaN/GaN SC HEMT and simulation of AlGaN/GaN/AlGaN/GaN DC-HEMT. The AlGaN/GaN-based HEMT device is designed and analyzed using ATLAS SILVACO Technology...