Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/447765
Title: Extraction and interpretation of mobility in heavily doped junctionless transistors
Researcher: Bhuvaneshwari, Y.V.
Guide(s): Kranti, Abhinav
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Indore
Completed Date: 2019
Abstract: Available newline
Pagination: 130p.
URI: http://hdl.handle.net/10603/447765
Appears in Departments:Department of Electrical Engineering

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01_title.pdfAttached File258.59 kBAdobe PDFView/Open
02_prelim pages.pdf503.25 kBAdobe PDFView/Open
03_contents.pdf223.85 kBAdobe PDFView/Open
04_abstract.pdf183.78 kBAdobe PDFView/Open
05_chapter 1.pdf932.7 kBAdobe PDFView/Open
06_chapter 2.pdf806.81 kBAdobe PDFView/Open
07_chapter 3.pdf575.29 kBAdobe PDFView/Open
08_chapter 4.pdf634.13 kBAdobe PDFView/Open
80_recommendation.pdf381.97 kBAdobe PDFView/Open
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