Modelling simulation and analysis of triple material quadruple gate and Tri Gate tunnel field effect Transistors

Abstract

The micro electronic technology has been transformed to nano technology after a long duration due to consistent research that has taken place. Even though there were large complexity in design and implementation, there emerged a nano electronic device with excellent device performance. This includes high speed, high compatibility, high reliability, increased efficiency with enhanced performance characteristic at nominal price. newlineAfter conventional transistors and MOS transistors which were the basic building block of the electronic industry, the utter need for better performance electronic device paved way for intensive research in high performance miniaturized device.On having higher merits of scaling down of transistors, there are various undesirable effects such as higher current drive requirement, defects due to high packing density and high power consumption. These adverse effects are usually included in short channel effect. This is due to diminishing the length of the channel and should be removed or eliminated for proper operation of the device. newlineAn end to MOSFET scaling was reached when there was a constrain in sub threshold slope and leakage current. These factors hindered the MOSFET usage in low power requirements. Thus there was a search for novel device which could overcome the limitation that has been put forth by MOSFET.TFET was one such alternative which could be used instead of traditional MOSFET.TFET has a significant feature that it has a sub threshold swing lower than 60Mv/dec, higher stability and low leakage current. newline