Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/445068
Title: | Analytical Study of MOS Device For Leakage Reduction In Low Power Circuit |
Researcher: | Kumar, Prashant |
Guide(s): | Vashishath, Munish and Bansal, PK |
Keywords: | Engineering Engineering and Technology Engineering Electrical and Electronic |
University: | J.C. Bose University of Science and Technology, YMCA |
Completed Date: | 2021 |
Abstract: | newline |
Pagination: | |
URI: | http://hdl.handle.net/10603/445068 |
Appears in Departments: | Department of Electronics Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 27.98 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 263.71 kB | Adobe PDF | View/Open | |
03_content.pdf | 87.85 kB | Adobe PDF | View/Open | |
04_abstract.pdf | 44.24 kB | Adobe PDF | View/Open | |
05_chapter 1.pdf | 841.33 kB | Adobe PDF | View/Open | |
06_chapter 2.pdf | 155.8 kB | Adobe PDF | View/Open | |
07_chapter 3.pdf | 1.28 MB | Adobe PDF | View/Open | |
08_chapter 4.pdf | 1.3 MB | Adobe PDF | View/Open | |
09_chapter 5.pdf | 715.42 kB | Adobe PDF | View/Open | |
10_chapter 6.pdf | 157.61 kB | Adobe PDF | View/Open | |
11_annexures.pdf | 306.46 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 184.13 kB | Adobe PDF | View/Open |
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