Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/445066
Title: Analytical Study of MOS Device For Leakage Reduction In Low Power Circuit
Researcher: Kumar, Prashant
Guide(s): Vashishath, Munish and Bansal, PK
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: J.C. Bose University of Science and Technology, YMCA
Completed Date: 2021
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/445066
Appears in Departments:Department of Electronics Engineering

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01_title.pdfAttached File27.98 kBAdobe PDFView/Open
02_prelim pages.pdf263.71 kBAdobe PDFView/Open
03_content.pdf87.85 kBAdobe PDFView/Open
04_abstract.pdf44.24 kBAdobe PDFView/Open
05_chapter 1.pdf841.33 kBAdobe PDFView/Open
06_chapter 2.pdf155.8 kBAdobe PDFView/Open
07_chapter 3.pdf1.28 MBAdobe PDFView/Open
08_chapter 4.pdf1.3 MBAdobe PDFView/Open
09_chapter 5.pdf715.42 kBAdobe PDFView/Open
10_chapter 6.pdf157.61 kBAdobe PDFView/Open
11_annexures.pdf306.46 kBAdobe PDFView/Open
80_recommendation.pdf184.13 kBAdobe PDFView/Open
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