Investigations on reliability of integrated circuits using aging analysis

Abstract

The IC technology has scaled up to a few nm with an increase in the newlinecomplexity of the chip used for various applications like defence, industrial, newlinemedical, etc.,. The performance of the IC is ensured by the lifetime or age newlineparameters that provide the reliability of the fabricated IC. Due to the newlineworkload operating conditions of the IC employed in various applications, the newlineperformance is degraded from the device to the system level due to the newlinechange in the characteristics of the devices. Hence the reliability of the IC can newlinebe analyzed in the initial stage using the aging effects of the devices in the newlinecircuit to prevents the circuit failure after a certain period of aging. newlineThe main objective of the thesis is to analyze the impact of aging newlineeffects on the circuits to predict its performance with respect to the aging newlineperiod. The aging degradation in the device parameters like threshold voltage, newlinegate-source voltage, drain-source voltage, gate current, substrate current and newlinethe age and lifetime parameters that are calculated from the degradation in the newlinedevice parameters are measured from the circuit through reliability simulation newlinefor an aging period of 10years at a temperature of 27°C. The propagation newlinedelay degradation in the output Sum and Carry of full adder and the output newlinefrequency of the ring oscillator are measured. The shift in the circuit newlineparameters like propagation delay and supply current due to the aging effects newline