Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/442463
Title: | High k gate dielectrics for two dimensional multilayer hafnium disulfide based interdigitated electrodes field effect transistors next generation technology |
Researcher: | Shivani |
Guide(s): | Shrimali, Hitesh and Sharma, Satinder Kumar |
Keywords: | Engineering Engineering and Technology Engineering Electrical and Electronic |
University: | Indian Institute of Technology Mandi |
Completed Date: | 2020 |
Abstract: | newline |
Pagination: | xx,179 |
URI: | http://hdl.handle.net/10603/442463 |
Appears in Departments: | School of Computing and Electrical Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 98.84 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 1.5 MB | Adobe PDF | View/Open | |
03_content.pdf | 992.62 kB | Adobe PDF | View/Open | |
04_abstract.pdf | 847.12 kB | Adobe PDF | View/Open | |
05_chapter 1.pdf | 5.79 MB | Adobe PDF | View/Open | |
06_chapter 2.pdf | 6 MB | Adobe PDF | View/Open | |
07_chapter 3.pdf | 10.61 MB | Adobe PDF | View/Open | |
08_chapter 4.pdf | 7.14 MB | Adobe PDF | View/Open | |
09_chapter 5.pdf | 9.58 MB | Adobe PDF | View/Open | |
10_chapter 6.pdf | 6.47 MB | Adobe PDF | View/Open | |
11_annexure.pdf | 15.71 MB | Adobe PDF | View/Open | |
80_recommendation.pdf | 1.74 MB | Adobe PDF | View/Open |
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