Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/442463
Title: High k gate dielectrics for two dimensional multilayer hafnium disulfide based interdigitated electrodes field effect transistors next generation technology
Researcher: Shivani
Guide(s): Shrimali, Hitesh and Sharma, Satinder Kumar
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Mandi
Completed Date: 2020
Abstract: newline
Pagination: xx,179
URI: http://hdl.handle.net/10603/442463
Appears in Departments:School of Computing and Electrical Engineering

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01_title.pdfAttached File98.84 kBAdobe PDFView/Open
02_prelim pages.pdf1.5 MBAdobe PDFView/Open
03_content.pdf992.62 kBAdobe PDFView/Open
04_abstract.pdf847.12 kBAdobe PDFView/Open
05_chapter 1.pdf5.79 MBAdobe PDFView/Open
06_chapter 2.pdf6 MBAdobe PDFView/Open
07_chapter 3.pdf10.61 MBAdobe PDFView/Open
08_chapter 4.pdf7.14 MBAdobe PDFView/Open
09_chapter 5.pdf9.58 MBAdobe PDFView/Open
10_chapter 6.pdf6.47 MBAdobe PDFView/Open
11_annexure.pdf15.71 MBAdobe PDFView/Open
80_recommendation.pdf1.74 MBAdobe PDFView/Open
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