Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/442463
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dc.coverage.spatial
dc.date.accessioned2023-01-11T10:29:43Z-
dc.date.available2023-01-11T10:29:43Z-
dc.identifier.urihttp://hdl.handle.net/10603/442463-
dc.description.abstractnewline
dc.format.extentxx,179
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleHigh k gate dielectrics for two dimensional multilayer hafnium disulfide based interdigitated electrodes field effect transistors next generation technology
dc.title.alternative
dc.creator.researcherShivani
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.description.note
dc.contributor.guideShrimali, Hitesh and Sharma, Satinder Kumar
dc.publisher.placeMandi
dc.publisher.universityIndian Institute of Technology Mandi
dc.publisher.institutionSchool of Computing and Electrical Engineering
dc.date.registered2014
dc.date.completed2020
dc.date.awarded2020
dc.format.dimensions35
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:School of Computing and Electrical Engineering

Files in This Item:
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01_title.pdfAttached File98.84 kBAdobe PDFView/Open
02_prelim pages.pdf1.5 MBAdobe PDFView/Open
03_content.pdf992.62 kBAdobe PDFView/Open
04_abstract.pdf847.12 kBAdobe PDFView/Open
05_chapter 1.pdf5.79 MBAdobe PDFView/Open
06_chapter 2.pdf6 MBAdobe PDFView/Open
07_chapter 3.pdf10.61 MBAdobe PDFView/Open
08_chapter 4.pdf7.14 MBAdobe PDFView/Open
09_chapter 5.pdf9.58 MBAdobe PDFView/Open
10_chapter 6.pdf6.47 MBAdobe PDFView/Open
11_annexure.pdf15.71 MBAdobe PDFView/Open
80_recommendation.pdf1.74 MBAdobe PDFView/Open


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