Analytical modeling and simulation Of fully depleted triple material Surrounding gate mosfets Considering short channel effects

Abstract

The steady down scaling of complementary metal oxide newlinesemiconductor CMOS device dimensions have lifted the era of micro newlineelectronics and computer aided ultra large scale integration ULSI design newlinetechnology into new summit The MOS Integrated circuits have paved the newlineway for the real time applications of computing communication and newlineentertainment with its acceleration on the speed improved performance and newlineultimately lesser power consumption The primary engine that ignited the newlineaugmentation on the revolution of electronics is scaling of transistors newlineHowever in addition to the abrupt evolution in the lithographic technology newlinethe expeditious of the physical dimensions shrinkage have not diminished the newlinevoltages in the device Increase in voltage leads to higher electric fields which newlinein turn increase current and the hot electron injection in to the gate As gate newlinelengths are scaled short channel effects start plaguing in to the device In newlineorder to reduce this deteriorate effect the evolution of Multi gate MOSFETs newlineis incurred into the intrinsic reality which reduced SCE in the semiconductor newlineThe design and analysis of such nano scale MOSFETs can assist in newlineprovisioning the further suppression of SCE in Future MOS Engineering This newlineserves as the motivation of the research work newlineShort channel effects such as drain induced barrier lowering hot newlineelectron effect and surface scattering are the optimal parameters newline newline