Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/435405
Title: Fabrication and characterization of porous silicon based alcohol gas sensor
Researcher: Selvakumar, V S
Guide(s): Sujatha, L
Keywords: Engineering and Technology
Engineering
Engineering Electrical and Electronic
Alcohol gas
Porous Silicon
Idiosyncrasies
University: Anna University
Completed Date: 2021
Abstract: The present evaluation editorial is dedicated to thc analysis of the newlineproblems related to the design and development of alcohol gas sensors based on newlinePorous Silicon (PS). The idiosyncrasies of the semiconductor porosification by newlineanodic etching and the philosophies of gas sensor design based on PS, including newlinegas sensor construction and main operating characteristics are considered in this newlineresearch work. It is shown that the surrounding atmosphere influences the newlineparameters of PS such as refractive index, the intensity of photoluminescence, newlineelectroconductivity, dielectric constant, and surface potential which might be newlineused to design gas sensor. newlineBy focusing on the conducted analysis, it can be concluded that PS has a great newlinepotential for gas sensor applications. newlineInitially, the research work started with a simulation of DC analysis of newlinePS-based gas sensor with Gold (Au) contact for better performance. It inspects newlinethe effects of porous silicon thickness with optimum placement of contact on the newlinesurface of PS by using CAD tool. The optimal condition for the gas sensing newlinemechanism is derived for 100um thickness of the PS which requires the distance newlinebetween the electrical contacts from 20 um - 50um to make the interface current newlinethrough Silicon substrate as negligible. newlineAfter successfully completing the design and simulation of newlinePS-based gas sensor, the formation porous silicon has been done. PS is formed newlineby electro-chemical etching of silicon in HF-based electrolyte. newline
Pagination: xviii,148p.
URI: http://hdl.handle.net/10603/435405
Appears in Departments:Faculty of Electrical Engineering

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02_prelime pages.pdf6.41 MBAdobe PDFView/Open
03_contents.pdf1.91 MBAdobe PDFView/Open
04_abstracts.pdf964.1 kBAdobe PDFView/Open
05_chapter 1.pdf2.43 MBAdobe PDFView/Open
06_chapter 2.pdf3.19 MBAdobe PDFView/Open
07_chapter 3.pdf2.18 MBAdobe PDFView/Open
08_chapter 4.pdf3.27 MBAdobe PDFView/Open
09_chapter 5.pdf2.29 MBAdobe PDFView/Open
10_annexures.pdf3.64 MBAdobe PDFView/Open
80_recommendation.pdf1.6 MBAdobe PDFView/Open
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