1. Shodhganga@INFLIBNET
  2. Indian Institute of Science Education and Research (IISER) Thiruvananthapuram
  3. School of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/435067
Full metadata record
DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2023-01-03T04:01:12Z-
dc.date.available2023-01-03T04:01:12Z-
dc.identifier.urihttp://hdl.handle.net/10603/435067-
dc.description.abstractnewline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleDefect driven optoelectronic properties of unintentionally doped ZnO nanostructures and related devices
dc.title.alternative
dc.creator.researcherBandopadhyay, Kingshuk
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Condensed Matter
dc.description.note
dc.contributor.guideMitra, Joy
dc.publisher.placeThiruvananthapuram
dc.publisher.universityIndian Institute of Science Education and Research (IISER) Thiruvananthapuram
dc.publisher.institutionSchool of Physics
dc.date.registered2011
dc.date.completed2017
dc.date.awarded2017
dc.format.dimensions
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:School of Physics

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File37.74 kBAdobe PDFView/Open
02_prelim pages.pdf711.15 kBAdobe PDFView/Open
03_content.pdf180.82 kBAdobe PDFView/Open
04_chapter 1.pdf1.26 MBAdobe PDFView/Open
05_chapter 2.pdf2.26 MBAdobe PDFView/Open
06_chapter 3.pdf2.65 MBAdobe PDFView/Open
07_chapter 4.pdf2.4 MBAdobe PDFView/Open
08_chapter 5.pdf1.61 MBAdobe PDFView/Open
09_chapter 6.pdf333.8 kBAdobe PDFView/Open
10_annexures.pdf740.45 kBAdobe PDFView/Open
80_recommendation.pdf370.09 kBAdobe PDFView/Open
Show simple item record


Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).

Altmetric Badge: