Shodhganga : a reservoir of Indian theses @ INFLIBNET
The Shodhganga@INFLIBNET Centre provides a platform for research students to deposit their Ph.D. theses and make it available to the entire scholarly community in open access.
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/434020
| Title: | Next Generation High Electron Mobility Transistor based on InGaN Quantum Well Channel |
| Researcher: | Singh, Vikash Kumar |
| Guide(s): | Tyagi, Renu and Nath, Digbijoy N |
| Keywords: | Engineering Engineering and Technology Engineering Multidisciplinary |
| University: | Indian Institute of Science Bangalore |
| Completed Date: | 2019 |
| Abstract: | abstract is available newline |
| Pagination: | xxviii, 117p. |
| URI: | http://hdl.handle.net/10603/434020 |
| Appears in Departments: | Centre for Nano Science and Engineering |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 01_title.pdf | Attached File | 58.23 kB | Adobe PDF | View/Open |
| 02_prelim pages.pdf | 444.11 kB | Adobe PDF | View/Open | |
| 03_table of contents.pdf | 55.47 kB | Adobe PDF | View/Open | |
| 04_abstract.pdf | 155.6 kB | Adobe PDF | View/Open | |
| 05_chapter 1.pdf | 741.19 kB | Adobe PDF | View/Open | |
| 06_chapter 2.pdf | 1.94 MB | Adobe PDF | View/Open | |
| 07_chapter 3.pdf | 1.78 MB | Adobe PDF | View/Open | |
| 08_chapter 4.pdf | 1.35 MB | Adobe PDF | View/Open | |
| 09_chapter 5.pdf | 718.2 kB | Adobe PDF | View/Open | |
| 80_recommendation.pdf | 447.64 kB | Adobe PDF | View/Open |
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