Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/432730
Title: Modeling and Simulation of Bias Dependent Behavior in GaN HEMT for RF Applications
Researcher: Kaushik, Pragyey Kumar
Guide(s): Gupta, Ankur and Basu, Ananjan
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Delhi
Completed Date: 2022
Abstract: Abstract Available
Pagination: 
URI: http://hdl.handle.net/10603/432730
Appears in Departments:Centre for Applied Research in Electronics

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01_title.pdfAttached File23.46 kBAdobe PDFView/Open
02_prelim pages.pdf641.66 kBAdobe PDFView/Open
03_content.pdf357.1 kBAdobe PDFView/Open
04_abstract.pdf353.91 kBAdobe PDFView/Open
05_chapter 1.pdf510.72 kBAdobe PDFView/Open
06_chapter 2.pdf1.58 MBAdobe PDFView/Open
07_chapter 3.pdf908.1 kBAdobe PDFView/Open
08_chapter 4.pdf698.14 kBAdobe PDFView/Open
09_chapter 5.pdf1.13 MBAdobe PDFView/Open
10_chapter 6.pdf1.39 MBAdobe PDFView/Open
11_chapter 7.pdf779.11 kBAdobe PDFView/Open
12_chapter 8.pdf168.31 kBAdobe PDFView/Open
13_annexures.pdf264.4 kBAdobe PDFView/Open
80_recommendation.pdf192.83 kBAdobe PDFView/Open
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