Theoritical Analysis of few Band Structure Dependent Properties of Nanostructured Materials

Abstract

In this thesis the candidate explores the 2-D effective electron mass in quantum wells and Nipi newlinestructures, at the Fermi level by taking various technologically important heavily doped materials newlineand by formulating the corresponding dispersion relation in each case, the carrier statistics, newlinethe effective mass in details within the framework of formalism and considering newlineall types of anisotropies of the energy band constants respectively. In many cases the newlineeffective Fermi level mass in addition to Fermi energy depends on the size quantum numbers, newlineNipi quantum numbers and the scattering potential in the afore mentioned cases. In many cases newlinethe Dispersion Relation becomes complex due to the existence of the poles in the finite newlinecomplex plane of the corresponding electron energy spectrum. The effective mass exists in newlinethe band gap which is impossible without band tailing effects.The well-known expressions of newlinethe said quantities have also been obtained in all the cases from our generalized formulations newlinewhich exhibit the compatibility of the results. newline