Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/430675
Title: TCAD Simulation Based Device and Circuit Level Performance Analysis of Source Pocket Engineered GaSb Si Heterojunction Vertical TFETs
Researcher: Tripathy, Manas Ranjan
Guide(s): Jit, Satyabrata
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology IIT (BHU), Varanasi
Completed Date: 2020
Abstract: The abstract is available in the attachment. newline
Pagination: xxxvi,164
URI: http://hdl.handle.net/10603/430675
Appears in Departments:Electronics Engineering

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File Description SizeFormat 
01_title page.pdfAttached File1.84 MBAdobe PDFView/Open
02_preliminary page.pdf5.76 MBAdobe PDFView/Open
03_content.pdf4.32 MBAdobe PDFView/Open
04_abstract.pdf1.22 MBAdobe PDFView/Open
05_chapter 01.pdf15.36 MBAdobe PDFView/Open
06_chapter 02.pdf14.44 MBAdobe PDFView/Open
07_chapter 03.pdf8.75 MBAdobe PDFView/Open
08_chapter 04.pdf5.69 MBAdobe PDFView/Open
09_chapter 05.pdf5.28 MBAdobe PDFView/Open
10_chapter 06.pdf1.23 MBAdobe PDFView/Open
11_annexure.pdf5.99 MBAdobe PDFView/Open
80_recommendation.pdf3.07 MBAdobe PDFView/Open
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