Simulation and Modeling of GaN HEMT based Biosensor for Label free Detection of Biomolecules

Abstract

The necessary application of biosensors in various non-clinical and clinical fields results in higher research interest in both developing and designing new-generation biosensors which could provide faster detection results with simple operation in comparison to conventional laboratory-based detection techniques. Out of different biosensors, the FET- based biosensors hold great promise with significant advantages such as miniaturization, easier on-chip integration, cost-effective, low power consumption, label-free, portability, low-cost mass production, high sensitivity, high scalability, smaller response time, real-time detection, accurate detection, and high signal-to-noise ratio. The HEMT device grows into a strong candidate for designing the next-generation biosensor with its properties like stable material properties, superior biocompatibility, and higher thermal and chemical stability in solution resulting in greater sensitivity with variation in surface charge due to the two-dimensional electron gas (2DEG) channel which moves closer towards the surface. This work has been developed for investigating the methods for increasing the sensitivity of the HEMT biosensor for label-free detection of target biomolecules. Comprehensive review work is carried out on the existing literature on the HEMT-based biosensor through a detailedly analyzing the detection methods and physical design methods which deliver data related to HEMT biosensors at a single point for the new researchers. The N-polar dielectric modulated MOSHEMT devices offers advantages such as improved electron confinement in the channel, lower contact and access (source and drain) resistance, and offers enhancement mode of operation, and decrease in short channel effects due to their profit of reverse polarization direction back-barrier devices, and greater value of gate-channel capacitance. There is a 3.3% increase in transconductance for uricase as compared to ChOx. The gate-work function engineering is used in the Ferroelectric HEMT- based biosensor