Investigating Electronic Properties of different nano transistors

Abstract

VLSI is a very commonly used term in late-twentieth century owing to the proposal of famous newlineGordan Moore, which basically makes the foundation of electronics industry. With the increased newlinedemand of miniaturization along with reduced power consumption and lower applied bias, newlinedevice engineers, both in theoretical as well as in experimental fields, starts to explore novel newlinedevice structures, well supported by existing fabrication techniques. This instigates a new newlineparadigm of semiconductor device research, coupled with quantum-mechanical phenomenon; newlineresults a series of novel structures compatible with the demand of VLSI chip design, following newlinethe predicted roadmap of ITRS. newlineAs the dimension of device decreases, short-channel effect becomes a serious concern for device newlinepeople. Therefore, it is the duty of researchers to engineer such devices which can also satisfy newlinethe stringent requirement of eliminating short-channel problems, as far as practicable. In the newlinenano-scale, some devices are precisely designed with quantum mechanical electron transport, newlineinstead of drift-diffusion based mechanism, and separate quantum-electronic circuits are newlineproduced using those devices. All these modifications are introduced to make better ION/IOFF, i.e., newlineeither by increasing drain current, or conductance; or by reducing leakage current. This is the newlinedemand of present-day market, and, therefore, probably, in accordance with the proposed title newlineof the thesis. newlineA deep understanding of the theoretical and computational aspects of emerging nanoscale newlinedevices is a prime requirement for the development and growth of nanotechnology. In recent newlineyears, rapid development in the area of electronics and micro computing is fuelled by the newlinesignificant innovations and applications of nanotechnology. Recently it has been noticed that newlinerapid progress in nanoscale engineering and science leads to the relentless development of newlineemerging devices with sophisticated materials. Therefore, in order to achieve a more newlinequantitative and qualitative understanding of the nanosca