1. Shodhganga@INFLIBNET
  2. National Institute of Technology (NIT), Warangal
  3. Department of Electronics and Communication Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/425968
Title: Analytical modeling and simulation of gate material and channel engineering of DG Strained Si MOSFET with interface charges
Researcher: Rao, Suddapalli Subba
Guide(s): Rao, N. Bheema
Keywords: CMOS technology
Engineering
Engineering and Technology
Non-conventional field effect
TCAD simulations
University: National Institute of Technology (NIT), Warangal
Completed Date: 2021
Abstract: newline
Pagination: xviii, 105 p.
URI: http://hdl.handle.net/10603/425968
Appears in Departments:Department of Electronics and Communication Engineering

Files in This Item:
File Description SizeFormat 
01_title.pdfAttached File615.55 kBAdobe PDFView/Open
02_declaration.pdf47.33 kBAdobe PDFView/Open
03_certificate.pdf599.65 kBAdobe PDFView/Open
04_acknowledgement.pdf47.88 kBAdobe PDFView/Open
05_abstract.pdf49.31 kBAdobe PDFView/Open
06_content.pdf63.77 kBAdobe PDFView/Open
07_list of tables and figures.pdf116.61 kBAdobe PDFView/Open
08_abbreviations.pdf46.91 kBAdobe PDFView/Open
09_symbols.pdf72.4 kBAdobe PDFView/Open
10_chapter 1.pdf361.09 kBAdobe PDFView/Open
11_chapter 2.pdf111.64 kBAdobe PDFView/Open
12_chapter 3.pdf1.05 MBAdobe PDFView/Open
13_chapter 4.pdf5.31 MBAdobe PDFView/Open
14_chapter 5.pdf1.45 MBAdobe PDFView/Open
15_chapter 6.pdf76.08 kBAdobe PDFView/Open
16_references.pdf99.33 kBAdobe PDFView/Open
80_recommendation.pdf675.96 kBAdobe PDFView/Open
Show full item record


Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).

Altmetric Badge: