Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/425758
Title: Investigation of hydrogen implantation induced layer splitting of ge gasb and si
Researcher: Pathak, Ravi
Guide(s): Singh, Rajendra
Keywords: Physical Sciences
Physics
Physics Applied
University: Indian Institute of Technology Delhi
Completed Date: 2020
Abstract: Abstract Available
Pagination: 
URI: http://hdl.handle.net/10603/425758
Appears in Departments:Department of Physics

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01_title.pdfAttached File89.46 kBAdobe PDFView/Open
02_prelim pages.pdf314.34 kBAdobe PDFView/Open
03_content.pdf160.14 kBAdobe PDFView/Open
04_abstract.pdf187.57 kBAdobe PDFView/Open
05_chapter 1.pdf407.71 kBAdobe PDFView/Open
06_chapter 2.pdf565.18 kBAdobe PDFView/Open
07_chapter 3.pdf742.06 kBAdobe PDFView/Open
08_chapter 4.pdf980.56 kBAdobe PDFView/Open
09_chapter 5.pdf927 kBAdobe PDFView/Open
10_chapter 6.pdf121.26 kBAdobe PDFView/Open
11_annexures.pdf156.51 kBAdobe PDFView/Open
80_recommendation.pdf142.45 kBAdobe PDFView/Open
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