1. Shodhganga@INFLIBNET
  2. Motilal Nehru National Institute of Technology
  3. Department of Electronics and Communication Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/424982
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DC FieldValueLanguage
dc.date.accessioned2022-12-13T05:53:07Z-
dc.date.available2022-12-13T05:53:07Z-
dc.identifier.urihttp://hdl.handle.net/10603/424982-
dc.format.extenti;242p.-
dc.languageEnglish-
dc.rightsuniversity-
dc.titleModeling Analysis and Physics of Threshold Voltage Variation for Advanced Nano MOSFETs-
dc.creator.researcherSwami, Yashu-
dc.subject.keywordEngineering-
dc.subject.keywordEngineering and Technology-
dc.subject.keywordEngineering Electrical and Electronic-
dc.contributor.guideRai, Sanjeev-
dc.publisher.placeAllahabad-
dc.publisher.universityMotilal Nehru National Institute of Technology-
dc.publisher.institutionDepartment of Electronics and Communication Engineering-
dc.date.registered2015-
dc.date.completed2019-
dc.date.awarded2019-
dc.format.accompanyingmaterialDVD-
dc.source.universityUniversity-
dc.type.degreePh.D.-
Appears in Departments:Department of Electronics and Communication Engineering

Files in This Item:
File Description SizeFormat 
80_recommendation.pdfAttached File5.9 MBAdobe PDFView/Open
annexures.pdf836.1 kBAdobe PDFView/Open
chapter_1.pdf674.45 kBAdobe PDFView/Open
chapter_2.pdf692.54 kBAdobe PDFView/Open
chapter_3.pdf2.04 MBAdobe PDFView/Open
chapter_4.pdf0 BAdobe PDFView/Open
chapter_5.pdf1.46 MBAdobe PDFView/Open
chapter_6.pdf1.15 MBAdobe PDFView/Open
chapter_7.pdf297.04 kBAdobe PDFView/Open
contents.pdf379.16 kBAdobe PDFView/Open
prelim pages.pdf1.43 MBAdobe PDFView/Open
synopsis.pdf301.55 kBAdobe PDFView/Open
title page.pdf41.8 kBAdobe PDFView/Open
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