Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/424980
Title: Computational Modeling and Simulation Study of Triple Metal Gate Recessed Source Drain FDSOI MOSFET for Nanoscale Applications
Researcher: Anjali Priya
Guide(s): Mishra, Ram Awadh
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Motilal Nehru National Institute of Technology
Completed Date: 2019
Pagination: i;186p.
URI: http://hdl.handle.net/10603/424980
Appears in Departments:Department of Electronics and Communication Engineering

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80_recommendation.pdfAttached File8.44 MBAdobe PDFView/Open
annexures.pdf1.2 MBAdobe PDFView/Open
chapter_1.pdf1.17 MBAdobe PDFView/Open
chapter_2.pdf324.24 kBAdobe PDFView/Open
chapter_3.pdf1.53 MBAdobe PDFView/Open
chapter_4.pdf0 BAdobe PDFView/Open
chapter_5.pdf1.36 MBAdobe PDFView/Open
chapter_6.pdf1.4 MBAdobe PDFView/Open
chapter_7.pdf257.23 kBAdobe PDFView/Open
prelim pages.pdf949.28 kBAdobe PDFView/Open
synopsis.pdf165.04 kBAdobe PDFView/Open
table of contents.pdf231.58 kBAdobe PDFView/Open
title page.pdf131.77 kBAdobe PDFView/Open
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