Design Modeling and Study of Physical Processes in Ge1 xSnx Alloy Based Hetero Phototransistor

Abstract

This thesis work presents three different types of GeSn-based HPT s structures including n p n bulk, p n p bulk and MQWs, phototransistors and their performance analysis. In addition, the DC and noise equivalent circuit model of the bulk GeSn-based HPTs have also been developed for the first time. The proposed HPT incorporates Ge1 xSnx a narrow bandgap semiconductor alloy in the base layer as the active layer allows extending the photodetection range from NIR to MIR to achieve a wide range of detection. Further, it is also demonstrated that the lateral scaling impact improves the frequency performance, SNR, and spectral response of p n p GeSn phototransistors. In addition, this thesis work also presents the impact of defects on the various performance parameters of GeSn HPTs. newline