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http://hdl.handle.net/10603/421894
Title: | Metal decorated heteroatom doped Graphene for high performance Supercapacitor |
Researcher: | Muthu pandian, P |
Guide(s): | Pandurangan, A |
Keywords: | Physical Sciences Chemistry Chemistry Analytical Supercapacitor heteroatom |
University: | Anna University |
Completed Date: | 2020 |
Abstract: | The Ultimate source in the universe is the energy- which can neither be created nor destroyed. These energies can be stored in several things of conventional capacitors, batteries, and supercapacitors. Due to the multiple drawbacks in capacitors and batteries, we are moving forward to the next category of supercapacitors. In the last few decades, enormous electrode materials were synthesized and used to increase the energy storage in super capacitors such as activated charcoal, which is amorphous in nature. CNT, which is 2D structured materials synthesized in 1991 by Iijima, is a difficult and several-step process to synthesize. A revolution was created by a new carbon material of sp2 hybridized thin layer carbon atom called graphene. In recent years, symmetric and asymmetric solid-state super capacitor devices were investigated using newly synthesized electrode materials for practical application. In our current scenario, we have investigated the electrochemical characteristic nature of one atom less boron and one atom more nitrogen-doped graphene nanosheet with the transition metal of copper oxide and tungsten gets anchored on the boron-doped graphene nanosheet. Initially, the base materials of graphene oxide were synthesized by the oxidation of graphite powder using a strong oxidizing agent KMnO4 by the modified hummer s method. Using the synthesized GO as parent, precursors of copper sulphate pentahydrate (CuSO4. 5H2O) for copper and boron trioxide (B2O3) for boron. By simple hydrothermal method followed by pyrolysis at various temperatures from lower temperature 550 and#730;C to a higher temperature of 950and#730;C with a certain increase in 100 and#730;C temperature in chemical vapour deposition (CVD) process by the flow of inert Argon gas in the flow rate of 100 sccm rates newline |
Pagination: | xxxvii, 274p. |
URI: | http://hdl.handle.net/10603/421894 |
Appears in Departments: | Faculty of Science and Humanities |
Files in This Item:
File | Description | Size | Format | |
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01_title.pdf | Attached File | 25.19 kB | Adobe PDF | View/Open |
02_prelim pages.pdf | 1.8 MB | Adobe PDF | View/Open | |
03_content.pdf | 97.25 kB | Adobe PDF | View/Open | |
04_abstract.pdf | 141.27 kB | Adobe PDF | View/Open | |
05_chapter 1.pdf | 3.31 MB | Adobe PDF | View/Open | |
06_chapter 2.pdf | 3.25 MB | Adobe PDF | View/Open | |
07_chapter 3.pdf | 4.9 MB | Adobe PDF | View/Open | |
08_chapter 4.pdf | 3.45 MB | Adobe PDF | View/Open | |
09_chapter 5.pdf | 3.2 MB | Adobe PDF | View/Open | |
10_annexures.pdf | 180.9 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 109.61 kB | Adobe PDF | View/Open |
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