1. Shodhganga@INFLIBNET
  2. Indian Institute of Technology Guwahati
  3. DEPARTMENT OF ELECTRONICS AND ELECTRICAL ENGINEERING
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/421398
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DC FieldValueLanguage
dc.coverage.spatialElectronics and Electrical Engineering
dc.date.accessioned2022-12-01T11:43:33Z-
dc.date.available2022-12-01T11:43:33Z-
dc.identifier.urihttp://hdl.handle.net/10603/421398-
dc.description.abstractThe quest for making sub nano regime devices is posing several challenges to the electronics industry such as high leakage current high DIBL hot electron effect and other short channel effects Technology Computer Aided Design TCAD simulations can help overcome all these issues in the best possible manner provided it gives reliable and accurate results The solution accuracy of the TCAD simulations depends mainly on two main factors 1 Transport model employed for the analysis and 2 Num...
dc.format.extentNot Available
dc.languageEnglish
dc.relationNot Available
dc.rightsself
dc.titleDesign of machine learning based framework for semiconductor device analysis
dc.title.alternativeNot available
dc.creator.researcherKumar, Gaurav
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.description.noteNot Available
dc.contributor.guideTrivedi, Gaurav and Mahanta, Anil
dc.publisher.placeGuwahati
dc.publisher.universityIndian Institute of Technology Guwahati
dc.publisher.institutionDEPARTMENT OF ELECTRONICS AND ELECTRICAL ENGINEERING
dc.date.registered2012
dc.date.completed2020
dc.date.awarded2020
dc.format.dimensionsNot Available
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:DEPARTMENT OF ELECTRONICS AND ELECTRICAL ENGINEERING

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