Reliability enhancements in algan gan hemts through gate shaping

Abstract

Gallium Nitride GaN a wide bandgap semiconductor has emerged as the next generation material for semiconductor device applications Device operation at high frequency with elevated power is simultaneously possible using GaN technology A High Electron Mobility Transistor HEMT is designed using an AlGaN GaN heterostructure and has proved to have great potential both in high power and Radio Frequency RF applications Existing capability and reliability of the devices can be improved by the...